X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	590-598
Number of pages	9
Journal	Semiconductor Science and Technology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/13/6/009
Publication status	Published - Jun 1998

Fields of science

@article{8a6400168db243cdaa77427e9b2614f4,

title = "X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers",

author = "G. Abstreiter and G{\"u}nther Bauer and Darhuber, \{A. A.\} and Vaclav Holy and J. N{\"u}tzel and Julian Stangl",

year = "1998",

month = jun,

doi = "10.1088/0268-1242/13/6/009",

language = "English",

volume = "13",

pages = "590--598",

journal = "Semiconductor Science and Technology",

publisher = "IOP Publishing",

number = "6",

}

TY - JOUR

T1 - X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

AU - Abstreiter, G.

AU - Bauer, Günther

AU - Darhuber, A. A.

AU - Holy, Vaclav

AU - Nützel, J.

AU - Stangl, Julian

PY - 1998/6

Y1 - 1998/6

UR - https://www.scopus.com/pages/publications/0001113714

U2 - 10.1088/0268-1242/13/6/009

DO - 10.1088/0268-1242/13/6/009

M3 - Article

VL - 13

SP - 590

EP - 598

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -