Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	48-53
Number of pages	6
Journal	Journal of Experimental and Theoretical Physics Letters
Volume	70
Issue number	1
DOIs	https://doi.org/10.1134/1.568128
Publication status	Published - 10 Jul 1999

Fields of science

@article{d14c2038b5fd4b90bd795b890a2b0975,

title = "Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures",

author = "G{\"u}nther Bauer and Gerhard Brunthaler and A. Prinz and Pudalov, \{V. M.\}",

year = "1999",

month = jul,

day = "10",

doi = "10.1134/1.568128",

language = "English",

volume = "70",

pages = "48--53",

journal = "Journal of Experimental and Theoretical Physics Letters",

number = "1",

}

TY - JOUR

T1 - Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

AU - Bauer, Günther

AU - Brunthaler, Gerhard

AU - Prinz, A.

AU - Pudalov, V. M.

PY - 1999/7/10

Y1 - 1999/7/10

UR - https://www.scopus.com/pages/publications/0002780881

U2 - 10.1134/1.568128

DO - 10.1134/1.568128

M3 - Article

VL - 70

SP - 48

EP - 53

JO - Journal of Experimental and Theoretical Physics Letters

JF - Journal of Experimental and Theoretical Physics Letters

IS - 1

ER -