Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon

G. Hobler, A. Simionescu, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	272-277
Number of pages	6
Journal	Journal of Vacuum Science and Technology B
DOIs	https://doi.org/10.1116/1.588460
Publication status	Published - 1996

Fields of science

@article{4870c476012e4895b5237c716fc08d44,

title = "Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon",

author = "G. Hobler and A. Simionescu and F. Jahnel and {von Criegern}, R. and C. Tian and G. Stingeder",

year = "1996",

doi = "10.1116/1.588460",

language = "English",

pages = "272--277",

journal = "Journal of Vacuum Science and Technology B",

}

TY - JOUR

T1 - Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon

AU - Hobler, G.

AU - Simionescu, A.

AU - Jahnel, F.

AU - von Criegern, R.

AU - Tian, C.

AU - Stingeder, G.

PY - 1996

Y1 - 1996

U2 - 10.1116/1.588460

DO - 10.1116/1.588460

M3 - Article

SP - 272

EP - 277

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -