Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

Victor Tapio Rangel - Kuoppa; A. Tonkikh; Nicolai Zakharov; Christian Eisenschmidt; Peter Werner

doi:10.1088/0957-4484/27/7/075705

Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

Victor Tapio Rangel - Kuoppa, A. Tonkikh, Nicolai Zakharov, Christian Eisenschmidt, Peter Werner

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	075705
Pages (from-to)	075705/1-7
Number of pages	7
Journal	Nanotechnology
Volume	27
Issue number	7
DOIs	https://doi.org/10.1088/0957-4484/27/7/075705
Publication status	Published - Jan 2016

Fields of science

210006 Nanotechnology
103011 Semiconductor physics
103018 Materials physics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1088/0957-4484/27/7/075705

Cite this

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title = "Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy",

author = "\{Rangel - Kuoppa\}, \{Victor Tapio\} and A. Tonkikh and Nicolai Zakharov and Christian Eisenschmidt and Peter Werner",

year = "2016",

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doi = "10.1088/0957-4484/27/7/075705",

language = "English",

volume = "27",

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journal = "Nanotechnology",

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TY - JOUR

T1 - Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

AU - Rangel - Kuoppa, Victor Tapio

AU - Tonkikh, A.

AU - Zakharov, Nicolai

AU - Eisenschmidt, Christian

AU - Werner, Peter

PY - 2016/1

Y1 - 2016/1

UR - https://www.scopus.com/pages/publications/84955476237

U2 - 10.1088/0957-4484/27/7/075705

DO - 10.1088/0957-4484/27/7/075705

M3 - Article

SN - 0957-4484

VL - 27

SP - 075705/1-7

JO - Nanotechnology

JF - Nanotechnology

IS - 7

M1 - 075705

ER -

Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

Fields of science

JKU Focus areas

Access to Document

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Cite this