Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

A. Marzegalli; Fabio Isa; Heiko Groiss; Elisabeth Müller; Claudiu V. Falub; Alfonso G. Taboada; Philippe Niedermann; G. Isella; Friedrich Schäffler; Francesco Montalenti; H. von Känel; Leo Miglio

doi:10.1002/adma.201300550

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

A. Marzegalli, Fabio Isa, Heiko Groiss, Elisabeth Müller, Claudiu V. Falub, Alfonso G. Taboada, Philippe Niedermann, G. Isella, Friedrich Schäffler, Francesco Montalenti, H. von Känel, Leo Miglio

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

Original language	English
Pages (from-to)	4408-4412
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	32
DOIs	https://doi.org/10.1002/adma.201300550
Publication status	Published - 2013

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1002/adma.201300550

Cite this

Marzegalli, A., Isa, F., Groiss, H., Müller, E., Falub, C. V., Taboada, A. G., Niedermann, P., Isella, G., Schäffler, F., Montalenti, F., von Känel, H., & Miglio, L. (2013). Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning. Advanced Materials, 25(32), 4408-4412. https://doi.org/10.1002/adma.201300550

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title = "Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning",

abstract = "An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.",

author = "A. Marzegalli and Fabio Isa and Heiko Groiss and Elisabeth M{\"u}ller and Falub, \{Claudiu V.\} and Taboada, \{Alfonso G.\} and Philippe Niedermann and G. Isella and Friedrich Sch{\"a}ffler and Francesco Montalenti and \{von K{\"a}nel\}, H. and Leo Miglio",

year = "2013",

doi = "10.1002/adma.201300550",

language = "English",

volume = "25",

pages = "4408--4412",

journal = "Advanced Materials",

issn = "1521-4095",

publisher = "WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

number = "32",

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Marzegalli, A, Isa, F, Groiss, H, Müller, E, Falub, CV, Taboada, AG, Niedermann, P, Isella, G, Schäffler, F, Montalenti, F, von Känel, H & Miglio, L 2013, 'Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning', Advanced Materials, vol. 25, no. 32, pp. 4408-4412. https://doi.org/10.1002/adma.201300550

TY - JOUR

T1 - Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

AU - Marzegalli, A.

AU - Isa, Fabio

AU - Groiss, Heiko

AU - Müller, Elisabeth

AU - Falub, Claudiu V.

AU - Taboada, Alfonso G.

AU - Niedermann, Philippe

AU - Isella, G.

AU - Schäffler, Friedrich

AU - Montalenti, Francesco

AU - von Känel, H.

AU - Miglio, Leo

PY - 2013

Y1 - 2013

N2 - An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

AB - An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

UR - https://www.scopus.com/pages/publications/84882576151

U2 - 10.1002/adma.201300550

DO - 10.1002/adma.201300550

M3 - Article

SN - 1521-4095

VL - 25

SP - 4408

EP - 4412

JO - Advanced Materials

JF - Advanced Materials

IS - 32

ER -

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

Abstract

Fields of science

JKU Focus areas

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