Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate

Yongheng Huo; Armando Rastelli; Oliver G. Schmidt

doi:10.1063/1.4802088

Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate

Yongheng Huo, Armando Rastelli, Oliver G. Schmidt

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we measure an average excitonic fine structure splitting (FSS) of only (3.9 ± 1.8) μeV. The FSS and polarization direction of the two bright excitonic recombination lines directly reflect the degree of the QD symmetry. Since the FSS is comparable to typical homogeneous linewidths of excitonic recombination, these strain-free GaAs/AlGaAs QDs might offer a practical platform to generate entangled photons in future quantum devices.

Original language	English
Article number	152105
Pages (from-to)	152105
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	15
DOIs	https://doi.org/10.1063/1.4802088
Publication status	Published - 2013

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4802088

Cite this

@article{5aa0b210706444109165f3c1bfea56a7,

title = "Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate",

abstract = "We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we measure an average excitonic fine structure splitting (FSS) of only (3.9 ± 1.8) μeV. The FSS and polarization direction of the two bright excitonic recombination lines directly reflect the degree of the QD symmetry. Since the FSS is comparable to typical homogeneous linewidths of excitonic recombination, these strain-free GaAs/AlGaAs QDs might offer a practical platform to generate entangled photons in future quantum devices.",

author = "Yongheng Huo and Armando Rastelli and Schmidt, \{Oliver G.\}",

year = "2013",

doi = "10.1063/1.4802088",

language = "English",

volume = "102",

pages = "152105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate

AU - Huo, Yongheng

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

PY - 2013

Y1 - 2013

N2 - We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we measure an average excitonic fine structure splitting (FSS) of only (3.9 ± 1.8) μeV. The FSS and polarization direction of the two bright excitonic recombination lines directly reflect the degree of the QD symmetry. Since the FSS is comparable to typical homogeneous linewidths of excitonic recombination, these strain-free GaAs/AlGaAs QDs might offer a practical platform to generate entangled photons in future quantum devices.

AB - We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we measure an average excitonic fine structure splitting (FSS) of only (3.9 ± 1.8) μeV. The FSS and polarization direction of the two bright excitonic recombination lines directly reflect the degree of the QD symmetry. Since the FSS is comparable to typical homogeneous linewidths of excitonic recombination, these strain-free GaAs/AlGaAs QDs might offer a practical platform to generate entangled photons in future quantum devices.

UR - https://www.scopus.com/pages/publications/84877156701

U2 - 10.1063/1.4802088

DO - 10.1063/1.4802088

M3 - Article

SN - 0003-6951

VL - 102

SP - 152105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152105

ER -

Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate

Abstract

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