Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well

Friedrich Schäffler, K. Lai, Michael Mühlberger, D.C. Tsui, S. Lyon, W. Pan

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number081313
Pages (from-to)081313(R)
Number of pages5
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
Publication statusPublished - 2005

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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