Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping

S. Roy; H. L. Meyerheim; Arthur Ernst; K. Mohseni; C. Tusche; M.G. Vergniory; T.V. Menshchikova; M.M. Otrokov; A. G. Ryabishchenkova; Z. S. Aliev; M. B. Babanly; K. A. Kokh; O. E. Tereshchenko; Evgueni V. Chulkov; J Schneider; J. Kirschner

doi:10.1103/PhysRevLett.113.116802

Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping

S. Roy
, H. L. Meyerheim
, Arthur Ernst
, K. Mohseni
, C. Tusche
, M.G. Vergniory
, T.V. Menshchikova
, M.M. Otrokov
, A. G. Ryabishchenkova
, Z. S. Aliev
, M. B. Babanly
, K. A. Kokh
, O. E. Tereshchenko
, Evgueni V. Chulkov
, J Schneider
, J. Kirschner

Department of Many Particle Systems

Research output: Contribution to journal › Article › peer-review

Abstract

Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace amounts of carbon doping of the Bi2Se3 surface allows the controlled shift of the Dirac point within the bulk band gap. In contrast to expectation, no Rashba-split two-dimensional electron gas states appear. This unique electronic modification is related to surface structural modification characterized by an expansion of the top Se-Bi spacing of approximate to 11% as evidenced by surface x-ray diffraction. Our results provide new ways to tune the surface band structure of topological insulators.

Original language	English
Article number	116802
Pages (from-to)	116802
Number of pages	5
Journal	Physical Review Letters
Volume	113
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.113.116802
Publication status	Published - Sept 2014

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103 Physics, Astronomy

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Roy, S., Meyerheim, H. L., Ernst, A., Mohseni, K., Tusche, C., Vergniory, M. G., Menshchikova, T. V., Otrokov, M. M., Ryabishchenkova, A. G., Aliev, Z. S., Babanly, M. B., Kokh, K. A., Tereshchenko, O. E., Chulkov, E. V., Schneider, J., & Kirschner, J. (2014). Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping. Physical Review Letters, 113(11), 116802. Article 116802. https://doi.org/10.1103/PhysRevLett.113.116802

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title = "Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping",

abstract = "Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace amounts of carbon doping of the Bi2Se3 surface allows the controlled shift of the Dirac point within the bulk band gap. In contrast to expectation, no Rashba-split two-dimensional electron gas states appear. This unique electronic modification is related to surface structural modification characterized by an expansion of the top Se-Bi spacing of approximate to 11\% as evidenced by surface x-ray diffraction. Our results provide new ways to tune the surface band structure of topological insulators.",

author = "S. Roy and Meyerheim, \{H. L.\} and Arthur Ernst and K. Mohseni and C. Tusche and M.G. Vergniory and T.V. Menshchikova and M.M. Otrokov and Ryabishchenkova, \{A. G.\} and Aliev, \{Z. S.\} and Babanly, \{M. B.\} and Kokh, \{K. A.\} and Tereshchenko, \{O. E.\} and Chulkov, \{Evgueni V.\} and J Schneider and J. Kirschner",

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doi = "10.1103/PhysRevLett.113.116802",

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Roy, S, Meyerheim, HL, Ernst, A, Mohseni, K, Tusche, C, Vergniory, MG, Menshchikova, TV, Otrokov, MM, Ryabishchenkova, AG, Aliev, ZS, Babanly, MB, Kokh, KA, Tereshchenko, OE, Chulkov, EV, Schneider, J & Kirschner, J 2014, 'Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping', Physical Review Letters, vol. 113, no. 11, 116802, pp. 116802. https://doi.org/10.1103/PhysRevLett.113.116802

TY - JOUR

T1 - Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping

AU - Roy, S.

AU - Meyerheim, H. L.

AU - Ernst, Arthur

AU - Mohseni, K.

AU - Tusche, C.

AU - Vergniory, M.G.

AU - Menshchikova, T.V.

AU - Otrokov, M.M.

AU - Ryabishchenkova, A. G.

AU - Aliev, Z. S.

AU - Babanly, M. B.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Chulkov, Evgueni V.

AU - Schneider, J

AU - Kirschner, J.

PY - 2014/9

Y1 - 2014/9

N2 - Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace amounts of carbon doping of the Bi2Se3 surface allows the controlled shift of the Dirac point within the bulk band gap. In contrast to expectation, no Rashba-split two-dimensional electron gas states appear. This unique electronic modification is related to surface structural modification characterized by an expansion of the top Se-Bi spacing of approximate to 11% as evidenced by surface x-ray diffraction. Our results provide new ways to tune the surface band structure of topological insulators.

AB - Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace amounts of carbon doping of the Bi2Se3 surface allows the controlled shift of the Dirac point within the bulk band gap. In contrast to expectation, no Rashba-split two-dimensional electron gas states appear. This unique electronic modification is related to surface structural modification characterized by an expansion of the top Se-Bi spacing of approximate to 11% as evidenced by surface x-ray diffraction. Our results provide new ways to tune the surface band structure of topological insulators.

UR - https://www.scopus.com/pages/publications/84937644614

U2 - 10.1103/PhysRevLett.113.116802

DO - 10.1103/PhysRevLett.113.116802

M3 - Article

SN - 1079-7114

VL - 113

SP - 116802

JO - Physical Review Letters

JF - Physical Review Letters

IS - 11

M1 - 116802

ER -

Tuning the Dirac Point Position in Bi2Se3(0001) via Surface Carbon Doping

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