Trap model for the metal-insulator transition in two-dimensional Si-MOS structures

T. Hörmann; Gerhard Brunthaler

doi:10.1063/1.2729832

Trap model for the metal-insulator transition in two-dimensional Si-MOS structures

T. Hörmann
, Gerhard Brunthaler

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006
Editors	W. Jantsch, F. Schäffler
Place of Publication	Melville, NY
Pages	187-188
Number of pages	2
Volume	893
DOIs	https://doi.org/10.1063/1.2729832
Publication status	Published - 2007

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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10.1063/1.2729832

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Hörmann, T., & Brunthaler, G. (2007). Trap model for the metal-insulator transition in two-dimensional Si-MOS structures. In W. Jantsch, F. Schäffler (Ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006 (Vol. 893, pp. 187-188). (AIP Conference Proceedings; Vol. 893).. https://doi.org/10.1063/1.2729832

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title = "Trap model for the metal-insulator transition in two-dimensional Si-MOS structures",

author = "T. H{\"o}rmann and Gerhard Brunthaler",

year = "2007",

doi = "10.1063/1.2729832",

language = "English",

isbn = "9780735403970",

volume = "893",

series = "AIP Conference Proceedings",

pages = "187--188",

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}

Hörmann, T & Brunthaler, G 2007, Trap model for the metal-insulator transition in two-dimensional Si-MOS structures. in W. Jantsch, F. Schäffler (ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. vol. 893, AIP Conference Proceedings, vol. 893, Melville, NY, pp. 187-188. https://doi.org/10.1063/1.2729832

Trap model for the metal-insulator transition in two-dimensional Si-MOS structures. / Hörmann, T.; Brunthaler, Gerhard.
Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. ed. / W. Jantsch, F. Schäffler. Vol. 893 Melville, NY, 2007. p. 187-188 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

TY - GEN

T1 - Trap model for the metal-insulator transition in two-dimensional Si-MOS structures

AU - Hörmann, T.

AU - Brunthaler, Gerhard

PY - 2007

Y1 - 2007

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U2 - 10.1063/1.2729832

DO - 10.1063/1.2729832

M3 - Conference proceedings

SN - 9780735403970

VL - 893

T3 - AIP Conference Proceedings

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EP - 188

BT - Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006

A2 - W. Jantsch, F. Schäffler, null

CY - Melville, NY

ER -

Trap model for the metal-insulator transition in two-dimensional Si-MOS structures

Publication series

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