Abstract
The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6% with an associated output power of 6.5mW which is an improvement of about 29% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.
| Original language | English |
|---|---|
| Title of host publication | Proc. 1997 of the 27th European Solid-State Device Research Conference (ESSDERC 97) |
| Pages | 296-299 |
| Number of pages | 4 |
| Publication status | Published - 1997 |
Fields of science
- 202 Electrical Engineering, Electronics, Information Engineering
- 202019 High frequency engineering
- 202029 Microwave engineering
- 202030 Communication engineering
- 202033 Radar technology
- 202037 Signal processing
- 202038 Telecommunications
- 202021 Industrial electronics
- 202027 Mechatronics
- 202028 Microelectronics
- 202036 Sensor systems
- 203017 Micromechanics
- 502058 Digital transformation