The role of quantum interference for the metallic state in high-mobility Silicon inversion layers

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

Original language	English
Title of host publication	Proceedings of the 26th International Conference on The Physics of Semiconductors
Editors	J.H Davies, A.R Long
Publisher	CRC Press
Number of pages	8
ISBN (Print)	9780429174957
Publication status	Published - Jul 2002

Fields of science

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "The role of quantum interference for the metallic state in high-mobility Silicon inversion layers",

author = "Gerhard Brunthaler and A. Prinz and G{\"u}nther Bauer and Pudalov, \{V. M.\}",

year = "2002",

month = jul,

language = "English",

isbn = "9780429174957",

editor = "\{J.H Davies, A.R Long\}",

booktitle = "Proceedings of the 26th International Conference on The Physics of Semiconductors",

publisher = "CRC Press",

}

The role of quantum interference for the metallic state in high-mobility Silicon inversion layers. / Brunthaler, Gerhard; Prinz, A.; Bauer, Günther et al.
Proceedings of the 26th International Conference on The Physics of Semiconductors. ed. / J.H Davies, A.R Long. CRC Press, 2002.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

TY - GEN

T1 - The role of quantum interference for the metallic state in high-mobility Silicon inversion layers

AU - Brunthaler, Gerhard

AU - Prinz, A.

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AU - Pudalov, V. M.

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M3 - Conference proceedings

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BT - Proceedings of the 26th International Conference on The Physics of Semiconductors

A2 - J.H Davies, A.R Long, null

PB - CRC Press

ER -