Test of Vegards law in thin epitaxial SiGe layers

Günther Bauer; B. Hollander; E. Kasper; H. Kibbel; A. Schuh

doi:10.1016/0022-0248(95)00373-8

Test of Vegards law in thin epitaxial SiGe layers

Günther Bauer, B. Hollander, E. Kasper, H. Kibbel, A. Schuh

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	68-72
Number of pages	5
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00373-8
Publication status	Published - 02 Dec 1995

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Access to Document

10.1016/0022-0248(95)00373-8

Cite this

@article{21985bfbb8d1426494042743b2a9f4f5,

title = "Test of Vegards law in thin epitaxial SiGe layers",

author = "G{\"u}nther Bauer and B. Hollander and E. Kasper and H. Kibbel and A. Schuh",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00373-8",

language = "English",

volume = "157",

pages = "68--72",

journal = "Journal of Crystal Growth",

issn = "1873-5002",

number = "1-4",

}

TY - JOUR

T1 - Test of Vegards law in thin epitaxial SiGe layers

AU - Bauer, Günther

AU - Hollander, B.

AU - Kasper, E.

AU - Kibbel, H.

AU - Schuh, A.

PY - 1995/12/2

Y1 - 1995/12/2

UR - https://www.scopus.com/pages/publications/0029633671

U2 - 10.1016/0022-0248(95)00373-8

DO - 10.1016/0022-0248(95)00373-8

M3 - Article

SN - 1873-5002

VL - 157

SP - 68

EP - 72

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Test of Vegards law in thin epitaxial SiGe layers

Fields of science

Access to Document

Other files and links

Cite this