Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide

Yanka Jeliazova; Michael Kayser; Beate Mildner; Achim Walter Hassel; Detlef Diesing

doi:10.1016/j.tsf.2005.10.088

Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide

Yanka Jeliazova, Michael Kayser, Beate Mildner, Achim Walter Hassel, Detlef Diesing (Editor)

Institute of Chemical Technology of Inorganic Materials

Research output: Contribution to journal › Article › peer-review

Abstract

The dielectric breakdown of thin (d = 3-4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, EDB, of 0.6 GV m-1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.

Original language	English
Pages (from-to)	330-335
Number of pages	6
Journal	Thin Solid Films
Volume	500
DOIs	https://doi.org/10.1016/j.tsf.2005.10.088
Publication status	Published - 2006

Fields of science

104005 Electrochemistry
104006 Solid state chemistry
104014 Surface chemistry
104017 Physical chemistry
105113 Crystallography
105116 Mineralogy
503013 Subject didactics of natural sciences
204 Chemical Process Engineering
204001 Inorganic chemical technology
205016 Materials testing
210006 Nanotechnology
211104 Metallurgy

JKU Focus areas

Engineering and Natural Sciences (in general)

Access to Document

10.1016/j.tsf.2005.10.088

Cite this

@article{af9cb95eed5c417e82d7a363a1fd439f,

title = "Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide",

abstract = "The dielectric breakdown of thin (d = 3-4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, EDB, of 0.6 GV m-1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80\% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.",

author = "Yanka Jeliazova and Michael Kayser and Beate Mildner and Hassel, \{Achim Walter\} and Detlef Diesing",

year = "2006",

doi = "10.1016/j.tsf.2005.10.088",

language = "English",

volume = "500",

pages = "330--335",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide

AU - Jeliazova, Yanka

AU - Kayser, Michael

AU - Mildner, Beate

AU - Hassel, Achim Walter

A2 - Diesing, Detlef

PY - 2006

Y1 - 2006

N2 - The dielectric breakdown of thin (d = 3-4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, EDB, of 0.6 GV m-1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.

AB - The dielectric breakdown of thin (d = 3-4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, EDB, of 0.6 GV m-1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.

U2 - 10.1016/j.tsf.2005.10.088

DO - 10.1016/j.tsf.2005.10.088

M3 - Article

SN - 0040-6090

VL - 500

SP - 330

EP - 335

JO - Thin Solid Films

JF - Thin Solid Films

ER -