Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Andreas Fuchsberger; L. Wind; Daniele Nazzari; Johannes Aberl; Enrique Prado-Navarrete; Moritz Brehm; Jean-Michel Hartmann; F. Fournel; L. Vogl; P. Schweizer; A. M. Minor; Masar Sistani; W. M. Weber

doi:10.1016/j.sse.2024.109055

Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Andreas Fuchsberger, L. Wind, Daniele Nazzari, Johannes Aberl, Enrique Prado-Navarrete, Moritz Brehm, Jean-Michel Hartmann, F. Fournel, L. Vogl, P. Schweizer, A. M. Minor, Masar Sistani, W. M. Weber^*

^*Corresponding author for this work

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	109055
Number of pages	7
Journal	Solid-State Electronics
Volume	226
DOIs	https://doi.org/10.1016/j.sse.2024.109055
Publication status	Published - Jun 2025

Fields of science

103 Physics, Astronomy

JKU Focus areas

Digital Transformation

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10.1016/j.sse.2024.109055

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Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Prado-Navarrete, E., Brehm, M., Hartmann, J.-M., Fournel, F., Vogl, L., Schweizer, P., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms. Solid-State Electronics, 226, Article 109055. https://doi.org/10.1016/j.sse.2024.109055

@article{4f55c4f13ad5433ca25227e47e9769fc,

title = "Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms",

author = "Andreas Fuchsberger and L. Wind and Daniele Nazzari and Johannes Aberl and Enrique Prado-Navarrete and Moritz Brehm and Jean-Michel Hartmann and F. Fournel and L. Vogl and P. Schweizer and Minor, \{A. M.\} and Masar Sistani and Weber, \{W. M.\}",

year = "2025",

month = jun,

doi = "10.1016/j.sse.2024.109055",

language = "English",

volume = "226",

journal = "Solid-State Electronics",

issn = "0038-1101",

}

Fuchsberger, A, Wind, L, Nazzari, D, Aberl, J, Prado-Navarrete, E, Brehm, M, Hartmann, J-M, Fournel, F, Vogl, L, Schweizer, P, Minor, AM, Sistani, M & Weber, WM 2025, 'Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms', Solid-State Electronics, vol. 226, 109055. https://doi.org/10.1016/j.sse.2024.109055

TY - JOUR

T1 - Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

AU - Fuchsberger, Andreas

AU - Wind, L.

AU - Nazzari, Daniele

AU - Aberl, Johannes

AU - Prado-Navarrete, Enrique

AU - Brehm, Moritz

AU - Hartmann, Jean-Michel

AU - Fournel, F.

AU - Vogl, L.

AU - Schweizer, P.

AU - Minor, A. M.

AU - Sistani, Masar

AU - Weber, W. M.

PY - 2025/6

Y1 - 2025/6

UR - https://www.scopus.com/pages/publications/85218267341

U2 - 10.1016/j.sse.2024.109055

DO - 10.1016/j.sse.2024.109055

M3 - Article

SN - 0038-1101

VL - 226

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 109055

ER -

Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Fields of science

JKU Focus areas

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