TY - GEN
T1 - Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon
AU - Rangel - Kuoppa, Victor Tapio
AU - Chen, Gang
AU - Jantsch, Wolfgang
PY - 2011/12
Y1 - 2011/12
N2 - Temperature dependent Capacitance‐Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3×1011 cm−2. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 1016 cm−3, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2×1015 cm−3 and 5×1015 cm−3, are also found. TCV results suggest they are related to the Ge QDs.
AB - Temperature dependent Capacitance‐Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3×1011 cm−2. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 1016 cm−3, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2×1015 cm−3 and 5×1015 cm−3, are also found. TCV results suggest they are related to the Ge QDs.
U2 - 10.1063/1.3666412
DO - 10.1063/1.3666412
M3 - Conference proceedings
VL - 1399
T3 - AIP Conference Proceedings
SP - 379
EP - 380
BT - PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1399
ER -