Surfactant-mediated Si quantum dot formation on Ge(001)

Dietmar Pachinger; Heiko Groiss; Michael Teuchtmann; Günter Hesser; Friedrich Schäffler

doi:10.1063/1.3595486

Surfactant-mediated Si quantum dot formation on Ge(001)

Dietmar Pachinger, Heiko Groiss, Michael Teuchtmann, Günter Hesser, Friedrich Schäffler

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	223104
Pages (from-to)	223104
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3595486
Publication status	Published - 30 May 2011

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.3595486

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@article{3748586efb62492d84ddc8475a7f87e0,

title = "Surfactant-mediated Si quantum dot formation on Ge(001)",

author = "Dietmar Pachinger and Heiko Groiss and Michael Teuchtmann and G{\"u}nter Hesser and Friedrich Sch{\"a}ffler",

year = "2011",

month = may,

day = "30",

doi = "10.1063/1.3595486",

language = "English",

volume = "98",

pages = "223104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Surfactant-mediated Si quantum dot formation on Ge(001)

AU - Pachinger, Dietmar

AU - Groiss, Heiko

AU - Teuchtmann, Michael

AU - Hesser, Günter

AU - Schäffler, Friedrich

PY - 2011/5/30

Y1 - 2011/5/30

UR - https://www.scopus.com/pages/publications/79958847742

U2 - 10.1063/1.3595486

DO - 10.1063/1.3595486

M3 - Article

SN - 0003-6951

VL - 98

SP - 223104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223104

ER -

Surfactant-mediated Si quantum dot formation on Ge(001)

Fields of science

JKU Focus areas

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