Surface properties of annealed semiconducting β-Ga                         2                         O                         3                          (1 0 0) single crystals for epitaxy

A. Navarro-Quezada; Z. Galazka; S. Alamé; D. Skuridina; P. Vogt; N. Esser

doi:10.1016/j.apsusc.2015.04.225

Surface properties of annealed semiconducting β-Ga ₂ O ₃ (1 0 0) single crystals for epitaxy

A. Navarro-Quezada^*
, Z. Galazka
, S. Alamé
, D. Skuridina
, P. Vogt
, N. Esser

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	368-373
Number of pages	6
Journal	Applied Surface Science
Volume	349
DOIs	https://doi.org/10.1016/j.apsusc.2015.04.225
Publication status	Published - 15 Sept 2015
Externally published	Yes

Fields of science

103020 Surface physics

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10.1016/j.apsusc.2015.04.225

Cite this

@article{edc391f703ee4f97bdd4bbab268aedfd,

title = "Surface properties of annealed semiconducting β-Ga 2 O 3 (1 0 0) single crystals for epitaxy",

keywords = "Annealing, Photoemission spectroscopy, Transparent oxides",

author = "A. Navarro-Quezada and Z. Galazka and S. Alam{\'e} and D. Skuridina and P. Vogt and N. Esser",

year = "2015",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2015.04.225",

language = "English",

volume = "349",

pages = "368--373",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

Surface properties of annealed semiconducting β-Ga ₂ O ₃ (1 0 0) single crystals for epitaxy. / Navarro-Quezada, A.; Galazka, Z.; Alamé, S. et al.
In: Applied Surface Science, Vol. 349, 15.09.2015, p. 368-373.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Surface properties of annealed semiconducting β-Ga 2 O 3 (1 0 0) single crystals for epitaxy

AU - Navarro-Quezada, A.

AU - Galazka, Z.

AU - Alamé, S.

AU - Skuridina, D.

AU - Vogt, P.

AU - Esser, N.

PY - 2015/9/15

Y1 - 2015/9/15

KW - Annealing

KW - Photoemission spectroscopy

KW - Transparent oxides

UR - https://www.scopus.com/pages/publications/84937708088

U2 - 10.1016/j.apsusc.2015.04.225

DO - 10.1016/j.apsusc.2015.04.225

M3 - Article

AN - SCOPUS:84937708088

SN - 0169-4332

VL - 349

SP - 368

EP - 373

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Surface properties of annealed semiconducting β-Ga 2 O 3 (1 0 0) single crystals for epitaxy

Fields of science

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Surface properties of annealed semiconducting β-Ga ₂ O ₃ (1 0 0) single crystals for epitaxy