Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires

Israel Lorite; Carlos I. Zandalazini; Pablo Esquinazi; Daniel Spemann; Stefan Friedländer; Andreas Pöppl; Tom Michalsky; Marius Grundmann; Jan Vogt; Jan D. Meijer; Silvia P. Heluani; Hendrik Ohldag; Waheed A. Adeagbo; Sanjeev K. Nayak; Wolfram Hergert; Arthur Ernst; Martin Hoffmann

doi:10.1088/0953-8984/27/25/256002

Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires

Israel Lorite, Carlos I. Zandalazini, Pablo Esquinazi, Daniel Spemann, Stefan Friedländer, Andreas Pöppl, Tom Michalsky, Marius Grundmann, Jan Vogt, Jan D. Meijer, Silvia P. Heluani, Hendrik Ohldag, Waheed A. Adeagbo, Sanjeev K. Nayak, Wolfram Hergert, Arthur Ernst, Martin Hoffmann

Department of Many Particle Systems

Research output: Contribution to journal › Article › peer-review

Abstract

The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.

Original language	English
Article number	256002
Pages (from-to)	256002
Number of pages	7
Journal	Journal of Physics: Condensed Matter
Volume	27
Issue number	25
DOIs	https://doi.org/10.1088/0953-8984/27/25/256002
Publication status	Published - Jul 2015

Fields of science

103 Physics, Astronomy

JKU Focus areas

Digital Transformation

Access to Document

10.1088/0953-8984/27/25/256002

Cite this

Lorite, I., Zandalazini, C. I., Esquinazi, P., Spemann, D., Friedländer, S., Pöppl, A., Michalsky, T., Grundmann, M., Vogt, J., Meijer, J. D., Heluani, S. P., Ohldag, H., Adeagbo, W. A., Nayak, S. K., Hergert, W., Ernst, A., & Hoffmann, M. (2015). Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires. Journal of Physics: Condensed Matter, 27(25), 256002. Article 256002. https://doi.org/10.1088/0953-8984/27/25/256002

@article{bad35dab3ad9452fa2d66c3b1c48adc6,

title = "Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires",

abstract = "The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.",

author = "Israel Lorite and Zandalazini, {Carlos I.} and Pablo Esquinazi and Daniel Spemann and Stefan Friedl{\"a}nder and Andreas P{\"o}ppl and Tom Michalsky and Marius Grundmann and Jan Vogt and Meijer, {Jan D.} and Heluani, {Silvia P.} and Hendrik Ohldag and Adeagbo, {Waheed A.} and Nayak, {Sanjeev K.} and Wolfram Hergert and Arthur Ernst and Martin Hoffmann",

year = "2015",

month = jul,

doi = "10.1088/0953-8984/27/25/256002",

language = "English",

volume = "27",

pages = "256002",

journal = "Journal of Physics: Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd",

number = "25",

}

Lorite, I, Zandalazini, CI, Esquinazi, P, Spemann, D, Friedländer, S, Pöppl, A, Michalsky, T, Grundmann, M, Vogt, J, Meijer, JD, Heluani, SP, Ohldag, H, Adeagbo, WA, Nayak, SK, Hergert, W, Ernst, A & Hoffmann, M 2015, 'Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires', Journal of Physics: Condensed Matter, vol. 27, no. 25, 256002, pp. 256002. https://doi.org/10.1088/0953-8984/27/25/256002

TY - JOUR

T1 - Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires

AU - Lorite, Israel

AU - Zandalazini, Carlos I.

AU - Esquinazi, Pablo

AU - Spemann, Daniel

AU - Friedländer, Stefan

AU - Pöppl, Andreas

AU - Michalsky, Tom

AU - Grundmann, Marius

AU - Vogt, Jan

AU - Meijer, Jan D.

AU - Heluani, Silvia P.

AU - Ohldag, Hendrik

AU - Adeagbo, Waheed A.

AU - Nayak, Sanjeev K.

AU - Hergert, Wolfram

AU - Ernst, Arthur

AU - Hoffmann, Martin

PY - 2015/7

Y1 - 2015/7

N2 - The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.

AB - The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.

U2 - 10.1088/0953-8984/27/25/256002

DO - 10.1088/0953-8984/27/25/256002

M3 - Article

SN - 0953-8984

VL - 27

SP - 256002

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

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ER -