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Study of misfit-dislocation formation in strained-layer heteroepitaxy using ultrahigh vacuum scanning tunneling microscopy

Research output: Chapter in Book/Report/Conference proceedingConference proceedingspeer-review

Original languageEnglish
Title of host publicationC,H,N and O in Si and Characterization and Simulation of Materials and Processes
Pages96-100
Number of pages5
Volume37
Edition1-3
DOIs
Publication statusPublished - 1996

Publication series

NameEuropean Materials Research Society Symposia Proceedings
ISSN (Print)0921-5107

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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