Structural properties of SiGe islands: Effect of capping

Vaclav Holy; Oliver G. Schmidt; Julian Stangl; Detlev Grützmacher; Günther Bauer; Ulrich Denker; O. Kirfel; Anke Hesse

Structural properties of SiGe islands: Effect of capping

Vaclav Holy
, Oliver G. Schmidt
, Julian Stangl
, Detlev Grützmacher
, Günther Bauer
, Ulrich Denker
, O. Kirfel
, Anke Hesse

Research output: Contribution to journal › Article › peer-review

Original language	English
Number of pages	11
Journal	Materials Research Society Symposia Proceedings
Volume	749
Publication status	Published - 2003

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Cite this

@article{ed9c51c3eac34e4786b8e03e9449b6f7,

title = "Structural properties of SiGe islands: Effect of capping",

author = "Vaclav Holy and Schmidt, \{Oliver G.\} and Julian Stangl and Detlev Gr{\"u}tzmacher and G{\"u}nther Bauer and Ulrich Denker and O. Kirfel and Anke Hesse",

year = "2003",

language = "English",

volume = "749",

journal = "Materials Research Society Symposia Proceedings",

issn = "0272-9172",

}

TY - JOUR

T1 - Structural properties of SiGe islands: Effect of capping

AU - Holy, Vaclav

AU - Schmidt, Oliver G.

AU - Stangl, Julian

AU - Grützmacher, Detlev

AU - Bauer, Günther

AU - Denker, Ulrich

AU - Kirfel, O.

AU - Hesse, Anke

PY - 2003

Y1 - 2003

M3 - Article

SN - 0272-9172

VL - 749

JO - Materials Research Society Symposia Proceedings

JF - Materials Research Society Symposia Proceedings

ER -