Structural Properties of Semiconductor Nanostructures from X-Ray Scattering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	227-237
Number of pages	11
Journal	Advances in Solid State Physics
Volume	44
DOIs	https://doi.org/10.1007/978-3-540-39970-4_18
Publication status	Published - 2004

Fields of science

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@article{fad0b59c6ab64aa8a12098fbd93e698d,

title = "Structural Properties of Semiconductor Nanostructures from X-Ray Scattering",

author = "Vaclav Holy and Schmidt, \{Oliver G.\} and Julian Stangl and Mathieu Stoffel and Anke Hesse and G{\"u}nther Bauer and Tobias Sch{\"u}lli",

year = "2004",

doi = "10.1007/978-3-540-39970-4\_18",

language = "English",

volume = "44",

pages = "227--237",

journal = "Advances in Solid State Physics",

issn = "1617-5034",

}

TY - JOUR

T1 - Structural Properties of Semiconductor Nanostructures from X-Ray Scattering

AU - Holy, Vaclav

AU - Schmidt, Oliver G.

AU - Stangl, Julian

AU - Stoffel, Mathieu

AU - Hesse, Anke

AU - Bauer, Günther

AU - Schülli, Tobias

PY - 2004

Y1 - 2004

U2 - 10.1007/978-3-540-39970-4_18

DO - 10.1007/978-3-540-39970-4_18

M3 - Article

SN - 1617-5034

VL - 44

SP - 227

EP - 237

JO - Advances in Solid State Physics

JF - Advances in Solid State Physics

ER -