Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Fang-Yuh Lo; Cheng-De Huang; Kai-Chieh Chou; Jhong-Yu Guo; Hsiang-Lin Liu; Verena Ney; Andreas Ney; Stepan Shvarkov; Sébastien Pezzagna; Dirk Reuter; Chi-Ta Chia; Ming-Yau Chern; Andreas Dirk Wieck; Jean Massies

doi:10.1063/1.4891226

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Fang-Yuh Lo, Cheng-De Huang, Kai-Chieh Chou, Jhong-Yu Guo, Hsiang-Lin Liu, Verena Ney, Andreas Ney, Stepan Shvarkov, Sébastien Pezzagna, Dirk Reuter, Chi-Ta Chia, Ming-Yau Chern, Andreas Dirk Wieck, Jean Massies

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original language	English
Article number	043909
Pages (from-to)	043909
Number of pages	8
Journal	Journal of Applied Physics
Volume	116
Issue number	4
DOIs	https://doi.org/10.1063/1.4891226
Publication status	Published - 2014

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103011 Semiconductor physics
103018 Materials physics
202032 Photovoltaics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

Access to Document

10.1063/1.4891226

Cite this

Lo, F.-Y., Huang, C.-D., Chou, K.-C., Guo, J.-Y., Liu, H.-L., Ney, V., Ney, A., Shvarkov, S., Pezzagna, S., Reuter, D., Chia, C.-T., Chern, M.-Y., Wieck, A. D., & Massies, J. (2014). Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics, 116(4), 043909. Article 043909. https://doi.org/10.1063/1.4891226

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title = "Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films",

abstract = "Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.",

author = "Fang-Yuh Lo and Cheng-De Huang and Kai-Chieh Chou and Jhong-Yu Guo and Hsiang-Lin Liu and Verena Ney and Andreas Ney and Stepan Shvarkov and S{\'e}bastien Pezzagna and Dirk Reuter and Chi-Ta Chia and Ming-Yau Chern and Wieck, {Andreas Dirk} and Jean Massies",

year = "2014",

doi = "10.1063/1.4891226",

language = "English",

volume = "116",

pages = "043909",

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T1 - Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

AU - Lo, Fang-Yuh

AU - Huang, Cheng-De

AU - Chou, Kai-Chieh

AU - Guo, Jhong-Yu

AU - Liu, Hsiang-Lin

AU - Ney, Verena

AU - Ney, Andreas

AU - Shvarkov, Stepan

AU - Pezzagna, Sébastien

AU - Reuter, Dirk

AU - Chia, Chi-Ta

AU - Chern, Ming-Yau

AU - Wieck, Andreas Dirk

AU - Massies, Jean

PY - 2014

Y1 - 2014

N2 - Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

AB - Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

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DO - 10.1063/1.4891226

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