Strain relaxation in high electron mobility Si1-xGex/Si structures

Günther Bauer; Vaclav Holy; J. H. Li; Friedrich Schäffler

doi:10.1063/1.366281

Strain relaxation in high electron mobility Si1-xGex/Si structures

Günther Bauer
, Vaclav Holy
, J. H. Li
, Friedrich Schäffler

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2881-2886
Number of pages	6
Journal	Journal of Applied Physics
Volume	82
Issue number	6
DOIs	https://doi.org/10.1063/1.366281
Publication status	Published - 15 Sept 1997

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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title = "Strain relaxation in high electron mobility Si1-xGex/Si structures",

author = "G{\"u}nther Bauer and Vaclav Holy and Li, \{J. H.\} and Friedrich Sch{\"a}ffler",

year = "1997",

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doi = "10.1063/1.366281",

language = "English",

volume = "82",

pages = "2881--2886",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Strain relaxation in high electron mobility Si1-xGex/Si structures

AU - Bauer, Günther

AU - Holy, Vaclav

AU - Li, J. H.

AU - Schäffler, Friedrich

PY - 1997/9/15

Y1 - 1997/9/15

UR - https://www.scopus.com/pages/publications/0006363687

U2 - 10.1063/1.366281

DO - 10.1063/1.366281

M3 - Article

SN - 0021-8979

VL - 82

SP - 2881

EP - 2886

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Strain relaxation in high electron mobility Si1-xGex/Si structures

Fields of science

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