Strain relaxation in high electron mobility Si1-xGex/Si structures

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@article{383c1914b83a4e51a9c067fab06c76eb,

title = "Strain relaxation in high electron mobility Si1-xGex/Si structures",

author = "G{\"u}nther Bauer and Vaclav Holy and Li, {J. H.} and Friedrich Sch{\"a}ffler",

year = "1997",

doi = "10.1063/1.366281",

language = "English",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}