Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates

T. Roch; S. Mentese; L. Diehl; Elisabeth Müller; H. Sigg; Detlev Grützmacher; J. Faist; Günther Bauer; U. Gennser; Y. Campidelli; O. Kermarrec; D. Bensahel; Julian Stangl

doi:10.1016/S1386-9477(02)00893-7

Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates

T. Roch
, S. Mentese
, L. Diehl
, Elisabeth Müller
, H. Sigg
, Detlev Grützmacher
, J. Faist
, Günther Bauer
, U. Gennser
, Y. Campidelli
, O. Kermarrec
, D. Bensahel
, Julian Stangl

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	613-617
Number of pages	5
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00893-7
Publication status	Published - Apr 2003

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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10.1016/S1386-9477(02)00893-7

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Roch, T., Mentese, S., Diehl, L., Müller, E., Sigg, H., Grützmacher, D., Faist, J., Bauer, G., Gennser, U., Campidelli, Y., Kermarrec, O., Bensahel, D., & Stangl, J. (2003). Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates. Physica E: Low-dimensional Systems and Nanostructures, 17(1-4), 613-617. https://doi.org/10.1016/S1386-9477(02)00893-7

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title = "Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates",

author = "T. Roch and S. Mentese and L. Diehl and Elisabeth M{\"u}ller and H. Sigg and Detlev Gr{\"u}tzmacher and J. Faist and G{\"u}nther Bauer and U. Gennser and Y. Campidelli and O. Kermarrec and D. Bensahel and Julian Stangl",

year = "2003",

month = apr,

doi = "10.1016/S1386-9477(02)00893-7",

language = "English",

volume = "17",

pages = "613--617",

journal = "Physica E: Low-dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-4",

}

Roch, T, Mentese, S, Diehl, L, Müller, E, Sigg, H, Grützmacher, D, Faist, J, Bauer, G, Gennser, U, Campidelli, Y, Kermarrec, O, Bensahel, D & Stangl, J 2003, 'Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates', Physica E: Low-dimensional Systems and Nanostructures, vol. 17, no. 1-4, pp. 613-617. https://doi.org/10.1016/S1386-9477(02)00893-7

TY - JOUR

T1 - Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates

AU - Roch, T.

AU - Mentese, S.

AU - Diehl, L.

AU - Müller, Elisabeth

AU - Sigg, H.

AU - Grützmacher, Detlev

AU - Faist, J.

AU - Bauer, Günther

AU - Gennser, U.

AU - Campidelli, Y.

AU - Kermarrec, O.

AU - Bensahel, D.

AU - Stangl, Julian

PY - 2003/4

Y1 - 2003/4

UR - https://www.scopus.com/pages/publications/0037393152

U2 - 10.1016/S1386-9477(02)00893-7

DO - 10.1016/S1386-9477(02)00893-7

M3 - Conference article

SN - 1386-9477

VL - 17

SP - 613

EP - 617

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

IS - 1-4

ER -

Strain-compensated Si/Si0.2 Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates

Fields of science

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