Strain and strain relaxation in Si1-xGex dot multilayers embedded in Si

Günther Bauer; A. A. Darhuber; N. Darowski; Vaclav Holy; D. Lübbert; U. Pietsch; Julian Stangl; Stefan Zerlauth

Strain and strain relaxation in Si1-xGex dot multilayers embedded in Si

Günther Bauer
, A. A. Darhuber
, N. Darowski
, Vaclav Holy
, D. Lübbert
, U. Pietsch
, Julian Stangl
, Stefan Zerlauth

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proc. 24th Int. Conf. on the Physics of Semiconductors
Publication status	Published - 1999

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Cite this

@inproceedings{8e5fef7760ba45b48ff173173fdf79dc,

title = "Strain and strain relaxation in Si1-xGex dot multilayers embedded in Si",

author = "G{\"u}nther Bauer and Darhuber, \{A. A.\} and N. Darowski and Vaclav Holy and D. L{\"u}bbert and U. Pietsch and Julian Stangl and Stefan Zerlauth",

year = "1999",

language = "English",

booktitle = "Proc. 24th Int. Conf. on the Physics of Semiconductors",

}