Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

Friedrich Schäffler; J. Myslivecek; Gunther Springholz; Christoph Schelling; J. Krug; B. Voigtländer; P. Smilauer

Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

Friedrich Schäffler
, J. Myslivecek
, Gunther Springholz
, Christoph Schelling
, J. Krug
, B. Voigtländer
, P. Smilauer

Research output: Contribution to journal › Article › peer-review

Original language	English
Number of pages	6
Journal	Materials Research Society Symposia Proceedings
Volume	749
Publication status	Published - 2003

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Cite this

@article{806e0fe93e2649cebaa7d40b0c63526b,

title = "Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy",

author = "Friedrich Sch{\"a}ffler and J. Myslivecek and Gunther Springholz and Christoph Schelling and J. Krug and B. Voigtl{\"a}nder and P. Smilauer",

year = "2003",

language = "English",

volume = "749",

journal = "Materials Research Society Symposia Proceedings",

issn = "0272-9172",

}

TY - JOUR

T1 - Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

AU - Schäffler, Friedrich

AU - Myslivecek, J.

AU - Springholz, Gunther

AU - Schelling, Christoph

AU - Krug, J.

AU - Voigtländer, B.

AU - Smilauer, P.

PY - 2003

Y1 - 2003

M3 - Article

SN - 0272-9172

VL - 749

JO - Materials Research Society Symposia Proceedings

JF - Materials Research Society Symposia Proceedings

ER -