Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

Friedrich Schäffler; J. Myslivecek; Gunther Springholz; Christoph Schelling; J. Krug; B. Voigtländer; P. Smilauer

Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

Friedrich Schäffler, J. Myslivecek, Gunther Springholz, Christoph Schelling, J. Krug, B. Voigtländer, P. Smilauer

Research output: Contribution to journal › Article › peer-review

Original language	English
Number of pages	6
Journal	Materials Research Society Symposia Proceedings
Volume	749
Publication status	Published - 2003

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@article{806e0fe93e2649cebaa7d40b0c63526b,

title = "Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy",

author = "Friedrich Sch{\"a}ffler and J. Myslivecek and Gunther Springholz and Christoph Schelling and J. Krug and B. Voigtl{\"a}nder and P. Smilauer",

year = "2003",

language = "English",

volume = "749",

journal = "Materials Research Society Symposia Proceedings",

issn = "0272-9172",

}

TY - JOUR

T1 - Step bunching during Si(001) homoepitaxy caused by surface diffusion anisotropy

AU - Schäffler, Friedrich

AU - Myslivecek, J.

AU - Springholz, Gunther

AU - Schelling, Christoph

AU - Krug, J.

AU - Voigtländer, B.

AU - Smilauer, P.

PY - 2003

Y1 - 2003

M3 - Article

SN - 0272-9172

VL - 749

JO - Materials Research Society Symposia Proceedings

JF - Materials Research Society Symposia Proceedings

ER -