Soft failures in integrated circuits as a matter of ESD events

Timm Ostermann

Soft failures in integrated circuits as a matter of ESD events

Department of Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

Due to ESD events in powered ICs “soft failures” could occur in the input/output cells of the padframe or in the IC core itself. As shown in this paper, soft failures can occur despite corresponding standard ESD protective structures. In order to detect these disturbances and to distinguish between valid signal changes and bit errors, a corresponding digital detector with adjusted switching thresholds is presented. Since the detector cell is correspondingly small (150μm × 16.5μm), it can be placed several times in the IC and read out via a scan chain.

Original language	English
Title of host publication	2018 International Conference on IC Design & Technology (ICICDT)
Number of pages	4
Publication status	Published - Jun 2018

Fields of science

102 Computer Sciences
202 Electrical Engineering, Electronics, Information Engineering

JKU Focus areas

Mechatronics and Information Processing

Cite this

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title = "Soft failures in integrated circuits as a matter of ESD events",

abstract = "Due to ESD events in powered ICs “soft failures” could occur in the input/output cells of the padframe or in the IC core itself. As shown in this paper, soft failures can occur despite corresponding standard ESD protective structures. In order to detect these disturbances and to distinguish between valid signal changes and bit errors, a corresponding digital detector with adjusted switching thresholds is presented. Since the detector cell is correspondingly small (150μm × 16.5μm), it can be placed several times in the IC and read out via a scan chain.",

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year = "2018",

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AB - Due to ESD events in powered ICs “soft failures” could occur in the input/output cells of the padframe or in the IC core itself. As shown in this paper, soft failures can occur despite corresponding standard ESD protective structures. In order to detect these disturbances and to distinguish between valid signal changes and bit errors, a corresponding digital detector with adjusted switching thresholds is presented. Since the detector cell is correspondingly small (150μm × 16.5μm), it can be placed several times in the IC and read out via a scan chain.

M3 - Conference proceedings

BT - 2018 International Conference on IC Design & Technology (ICICDT)

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