Skip to main navigation Skip to search Skip to main content

Single-electron transistor in strained Si/SiGe heterostructures

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume34
Issue number1-2
DOIs
Publication statusPublished - Aug 2006

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

Cite this