Single-electron transistor in strained Si/SiGe heterostructures

Friedrich Schäffler; Dietmar Pachinger; Georg Pillwein; Michael Mühlberger; Gerhard Brunthaler; Thomas Berer; Herbert Lichtenberger

doi:10.48550/arXiv.cond-mat/0508260

Single-electron transistor in strained Si/SiGe heterostructures

Friedrich Schäffler, Dietmar Pachinger, Georg Pillwein, Michael Mühlberger, Gerhard Brunthaler, Thomas Berer, Herbert Lichtenberger

Research output: Working paper and reports › Preprint

Original language	English
Number of pages	3
DOIs	https://doi.org/10.48550/arXiv.cond-mat/0508260
Publication status	Published - 2005

Publication series

Name	arXiv.org
ISSN (Print)	2331-8422

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.48550/arXiv.cond-mat/0508260

Cite this

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AU - Schäffler, Friedrich

AU - Pachinger, Dietmar

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AU - Brunthaler, Gerhard

AU - Berer, Thomas

AU - Lichtenberger, Herbert

PY - 2005

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