Silicon interstitial driven loss of substitutional carbon from SiGeC structures

M.S. Carroll, James C. Sturm, E. Napolitani, D. De Salvador, M. Berti, Julian Stangl, Günther Bauer, D.J. Tweet

Research output: Chapter in Book/Report/Conference proceedingConference proceedings

Original languageEnglish
Title of host publicationMaterials Research Society symposia proceedings
Number of pages6
Volume669
Publication statusPublished - May 2002

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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