SiGe quantum dots for fast hole spin Rabi oscillations

N. Ares; Georgios Katsaros; V. N. Golovach; Jianjun Zhang; A. Prager; L. I. Glazman; Oliver G. Schmidt; S. De Franceschi

doi:10.1063/1.4858959

SiGe quantum dots for fast hole spin Rabi oscillations

N. Ares
, Georgios Katsaros
, V. N. Golovach
, Jianjun Zhang
, A. Prager
, L. I. Glazman
, Oliver G. Schmidt
, S. De Franceschi

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique

Original language	English
Article number	263113
Pages (from-to)	263113
Number of pages	3
Journal	Applied Physics Letters
Volume	103
Issue number	26
DOIs	https://doi.org/10.1063/1.4858959
Publication status	Published - 23 Dec 2013

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4858959

Cite this

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abstract = "We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique",

author = "N. Ares and Georgios Katsaros and Golovach, \{V. N.\} and Jianjun Zhang and A. Prager and Glazman, \{L. I.\} and Schmidt, \{Oliver G.\} and \{De Franceschi\}, S.",

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doi = "10.1063/1.4858959",

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T1 - SiGe quantum dots for fast hole spin Rabi oscillations

AU - Ares, N.

AU - Katsaros, Georgios

AU - Golovach, V. N.

AU - Zhang, Jianjun

AU - Prager, A.

AU - Glazman, L. I.

AU - Schmidt, Oliver G.

AU - De Franceschi, S.

PY - 2013/12/23

Y1 - 2013/12/23

N2 - We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique

AB - We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique

UR - https://www.scopus.com/pages/publications/84891613672

U2 - 10.1063/1.4858959

DO - 10.1063/1.4858959

M3 - Article

SN - 0003-6951

VL - 103

SP - 263113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263113

ER -

SiGe quantum dots for fast hole spin Rabi oscillations

Abstract

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