SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

Günther Bauer; E. Carlino; I. Eisele; M. Gusso; H. von Känel; C. Penn; C. Rosenblad; J. Schulze; Julian Stangl; L. Tapfer

SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

Günther Bauer
, E. Carlino
, I. Eisele
, M. Gusso
, H. von Känel
, C. Penn
, C. Rosenblad
, J. Schulze
, Julian Stangl
, L. Tapfer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proc. 24th Int. Conf. on the Physics of Semiconductors
Publication status	Published - 1999

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Cite this

@inproceedings{1109a07e9cf34b64b1c3fcd778902bf3,

title = "SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process",

author = "G{\"u}nther Bauer and E. Carlino and I. Eisele and M. Gusso and \{von K{\"a}nel\}, H. and C. Penn and C. Rosenblad and J. Schulze and Julian Stangl and L. Tapfer",

year = "1999",

language = "English",

booktitle = "Proc. 24th Int. Conf. on the Physics of Semiconductors",

}

TY - GEN

T1 - SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

AU - Bauer, Günther

AU - Carlino, E.

AU - Eisele, I.

AU - Gusso, M.

AU - von Känel, H.

AU - Penn, C.

AU - Rosenblad, C.

AU - Schulze, J.

AU - Stangl, Julian

AU - Tapfer, L.

PY - 1999

Y1 - 1999

M3 - Conference proceedings

BT - Proc. 24th Int. Conf. on the Physics of Semiconductors

ER -