SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

Günther Bauer; E. Carlino; I. Eisele; M. Gusso; H. von Känel; C. Penn; C. Rosenblad; J. Schulze; Julian Stangl; L. Tapfer

SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

Günther Bauer, E. Carlino, I. Eisele, M. Gusso, H. von Känel, C. Penn, C. Rosenblad, J. Schulze, Julian Stangl, L. Tapfer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proc. 24th Int. Conf. on the Physics of Semiconductors
Publication status	Published - 1999

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process",

author = "G{\"u}nther Bauer and E. Carlino and I. Eisele and M. Gusso and \{von K{\"a}nel\}, H. and C. Penn and C. Rosenblad and J. Schulze and Julian Stangl and L. Tapfer",

year = "1999",

language = "English",

booktitle = "Proc. 24th Int. Conf. on the Physics of Semiconductors",

}

TY - GEN

T1 - SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process

AU - Bauer, Günther

AU - Carlino, E.

AU - Eisele, I.

AU - Gusso, M.

AU - von Känel, H.

AU - Penn, C.

AU - Rosenblad, C.

AU - Schulze, J.

AU - Stangl, Julian

AU - Tapfer, L.

PY - 1999

Y1 - 1999

M3 - Conference proceedings

BT - Proc. 24th Int. Conf. on the Physics of Semiconductors

ER -