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Shear strains in dry etched GaAs/AlAs wires studied by high resolution x-ray reciprocal space mapping

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)126-131
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
Publication statusPublished - 1998

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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