Shape and size of buried SiGe islands

G. Abstreiter; Günther Bauer; K. Brunner; A. Daniel; Vaclav Holy; Till Hartmut Metzger; T. Roch; Julian Stangl; J. Zhu

Shape and size of buried SiGe islands

G. Abstreiter
, Günther Bauer
, K. Brunner
, A. Daniel
, Vaclav Holy
, Till Hartmut Metzger
, T. Roch
, Julian Stangl
, J. Zhu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan
Pages	363-364
Publication status	Published - 2001

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Cite this

@inproceedings{12b6fd80cb2a45d9992eddf358432392,

title = "Shape and size of buried SiGe islands",

author = "G. Abstreiter and G{\"u}nther Bauer and K. Brunner and A. Daniel and Vaclav Holy and Metzger, \{Till Hartmut\} and T. Roch and Julian Stangl and J. Zhu",

year = "2001",

language = "English",

pages = "363--364",

booktitle = "Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan",

}

TY - GEN

T1 - Shape and size of buried SiGe islands

AU - Abstreiter, G.

AU - Bauer, Günther

AU - Brunner, K.

AU - Daniel, A.

AU - Holy, Vaclav

AU - Metzger, Till Hartmut

AU - Roch, T.

AU - Stangl, Julian

AU - Zhu, J.

PY - 2001

Y1 - 2001

M3 - Conference proceedings

SP - 363

EP - 364

BT - Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan

ER -