Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

Jianjun Zhang; Armando Rastelli; Oliver G. Schmidt; D. Scopece; Leo Miglio; Francesco Montalenti

doi:10.1063/1.4818717

Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

Jianjun Zhang
, Armando Rastelli
, Oliver G. Schmidt
, D. Scopece
, Leo Miglio
, Francesco Montalenti

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally oriented bundles, during in situ annealing of a few monolayers of Ge on Si(001). Results are interpreted in terms of a collective wave-propagation mechanism, previously suggested for interpreting ripple faceting on Ge/Si(1 1 10) surfaces. Quantitative agreement between experiments and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total density can be controlled by carefully tuning the growth parameters.

Original language	English
Article number	083109
Pages (from-to)	083109
Number of pages	5
Journal	Applied Physics Letters
Volume	103
Issue number	8
DOIs	https://doi.org/10.1063/1.4818717
Publication status	Published - 19 Aug 2013

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4818717

Cite this

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abstract = "We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally oriented bundles, during in situ annealing of a few monolayers of Ge on Si(001). Results are interpreted in terms of a collective wave-propagation mechanism, previously suggested for interpreting ripple faceting on Ge/Si(1 1 10) surfaces. Quantitative agreement between experiments and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total density can be controlled by carefully tuning the growth parameters.",

author = "Jianjun Zhang and Armando Rastelli and Schmidt, \{Oliver G.\} and D. Scopece and Leo Miglio and Francesco Montalenti",

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AU - Zhang, Jianjun

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

AU - Scopece, D.

AU - Miglio, Leo

AU - Montalenti, Francesco

PY - 2013/8/19

Y1 - 2013/8/19

N2 - We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally oriented bundles, during in situ annealing of a few monolayers of Ge on Si(001). Results are interpreted in terms of a collective wave-propagation mechanism, previously suggested for interpreting ripple faceting on Ge/Si(1 1 10) surfaces. Quantitative agreement between experiments and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total density can be controlled by carefully tuning the growth parameters.

AB - We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally oriented bundles, during in situ annealing of a few monolayers of Ge on Si(001). Results are interpreted in terms of a collective wave-propagation mechanism, previously suggested for interpreting ripple faceting on Ge/Si(1 1 10) surfaces. Quantitative agreement between experiments and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total density can be controlled by carefully tuning the growth parameters.

UR - http://apl.aip.org/resource/1/applab/v103/i8/p083109_s1

UR - https://www.scopus.com/pages/publications/84883373229

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VL - 103

SP - 083109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083109

ER -

Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

Abstract

Fields of science

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