Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Elisabeth Lausecker; Y. Hunang; Thomas Fromherz; James C. Sturm; Sigurd Wagner

doi:10.1063/1.3457446

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Elisabeth Lausecker
, Y. Hunang
, Thomas Fromherz
, James C. Sturm
, Sigurd Wagner

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	263501
Pages (from-to)	263501
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	26
DOIs	https://doi.org/10.1063/1.3457446
Publication status	Published - 28 Jun 2010

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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@article{04f911e94f6343f8a28fefcac2403729,

title = "Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication",

author = "Elisabeth Lausecker and Y. Hunang and Thomas Fromherz and Sturm, \{James C.\} and Sigurd Wagner",

year = "2010",

month = jun,

day = "28",

doi = "10.1063/1.3457446",

language = "English",

volume = "96",

pages = "263501",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

AU - Lausecker, Elisabeth

AU - Hunang, Y.

AU - Fromherz, Thomas

AU - Sturm, James C.

AU - Wagner, Sigurd

PY - 2010/6/28

Y1 - 2010/6/28

UR - https://www.scopus.com/pages/publications/77954324584

U2 - 10.1063/1.3457446

DO - 10.1063/1.3457446

M3 - Article

SN - 0003-6951

VL - 96

SP - 263501

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263501

ER -

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Fields of science

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