Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial library

Andrei Ionut Mardare; Alfred Ludwig; Alan Savan; Achim Walter Hassel

doi:10.1016/j.electacta.2013.03.065

Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial library

Andrei Ionut Mardare, Alfred Ludwig, Alan Savan, Achim Walter Hassel

Institute of Chemical Technology of Inorganic Materials

Research output: Contribution to journal › Article › peer-review

Abstract

A wide-range thin film Hf–Nb combinatorial library deposited by co-sputtering is studied. The microstruc-ture and crystallographic properties of the thin film alloys locally investigated by SEM and GIXRD aremapped along the entire compositional spread from 14 to 94 at.% Nb. Scanning droplet cell microscopy(SDCM) is used for mapping the electrochemical properties of the naturally oxidised metallic surfaces.Anodisation of the Hf–Nb thin films alloys is achieved with a high throughput due to computer-controlledscanning, made with a Composition resolution of 1 at.%. The electrical properties of the anodic oxides aremapped by EIS and a maximum electrical permittivity close to 75 was found for Hf–33 at.% Nb. Semi-conducting properties of the mixed anodic oxides are studied using Mott–Schottky analysis and theircomposition and mixing is investigated by XPS depth profiling.

Original language	English
Pages (from-to)	539-549
Number of pages	11
Journal	Electrochimica Acta
Volume	110
DOIs	https://doi.org/10.1016/j.electacta.2013.03.065
Publication status	Published - 2013

Fields of science

204001 Inorganic chemical technology

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1016/j.electacta.2013.03.065

Cite this

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title = "Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial library",

abstract = "A wide-range thin film Hf–Nb combinatorial library deposited by co-sputtering is studied. The microstruc-ture and crystallographic properties of the thin film alloys locally investigated by SEM and GIXRD aremapped along the entire compositional spread from 14 to 94 at.\% Nb. Scanning droplet cell microscopy(SDCM) is used for mapping the electrochemical properties of the naturally oxidised metallic surfaces.Anodisation of the Hf–Nb thin films alloys is achieved with a high throughput due to computer-controlledscanning, made with a Composition resolution of 1 at.\%. The electrical properties of the anodic oxides aremapped by EIS and a maximum electrical permittivity close to 75 was found for Hf–33 at.\% Nb. Semi-conducting properties of the mixed anodic oxides are studied using Mott–Schottky analysis and theircomposition and mixing is investigated by XPS depth profiling.",

author = "Mardare, \{Andrei Ionut\} and Alfred Ludwig and Alan Savan and Hassel, \{Achim Walter\}",

year = "2013",

doi = "10.1016/j.electacta.2013.03.065",

language = "English",

volume = "110",

pages = "539--549",

journal = "Electrochimica Acta",

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T1 - Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial library

AU - Mardare, Andrei Ionut

AU - Ludwig, Alfred

AU - Savan, Alan

AU - Hassel, Achim Walter

PY - 2013

Y1 - 2013

N2 - A wide-range thin film Hf–Nb combinatorial library deposited by co-sputtering is studied. The microstruc-ture and crystallographic properties of the thin film alloys locally investigated by SEM and GIXRD aremapped along the entire compositional spread from 14 to 94 at.% Nb. Scanning droplet cell microscopy(SDCM) is used for mapping the electrochemical properties of the naturally oxidised metallic surfaces.Anodisation of the Hf–Nb thin films alloys is achieved with a high throughput due to computer-controlledscanning, made with a Composition resolution of 1 at.%. The electrical properties of the anodic oxides aremapped by EIS and a maximum electrical permittivity close to 75 was found for Hf–33 at.% Nb. Semi-conducting properties of the mixed anodic oxides are studied using Mott–Schottky analysis and theircomposition and mixing is investigated by XPS depth profiling.

AB - A wide-range thin film Hf–Nb combinatorial library deposited by co-sputtering is studied. The microstruc-ture and crystallographic properties of the thin film alloys locally investigated by SEM and GIXRD aremapped along the entire compositional spread from 14 to 94 at.% Nb. Scanning droplet cell microscopy(SDCM) is used for mapping the electrochemical properties of the naturally oxidised metallic surfaces.Anodisation of the Hf–Nb thin films alloys is achieved with a high throughput due to computer-controlledscanning, made with a Composition resolution of 1 at.%. The electrical properties of the anodic oxides aremapped by EIS and a maximum electrical permittivity close to 75 was found for Hf–33 at.% Nb. Semi-conducting properties of the mixed anodic oxides are studied using Mott–Schottky analysis and theircomposition and mixing is investigated by XPS depth profiling.

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U2 - 10.1016/j.electacta.2013.03.065

DO - 10.1016/j.electacta.2013.03.065

M3 - Article

SN - 0013-4686

VL - 110

SP - 539

EP - 549

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -

Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial library

Abstract

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