Reversible Formation of 2D Electron Gas at the LaFeO3/SrTiO3 Interface via Control of Oxygen Vacancies

Pengfa Xu; Wei Han; Philip M. Rice; Jaewoo Jeong; Mahesh G. Samant; K. Mohseni; H. L. Meyerheim; S. Ostanin; I.V. Maznichenko; I. Mertig; Eberhard K.U. Gross; Arthur Ernst; S. S. P. Parkin

doi:10.1002/adma.201604447

Reversible Formation of 2D Electron Gas at the LaFeO3/SrTiO3 Interface via Control of Oxygen Vacancies

Pengfa Xu, Wei Han, Philip M. Rice, Jaewoo Jeong, Mahesh G. Samant, K. Mohseni, H. L. Meyerheim, S. Ostanin, I.V. Maznichenko, I. Mertig, Eberhard K.U. Gross, Arthur Ernst, S. S. P. Parkin

Department of Many Particle Systems

Research output: Contribution to journal › Article › peer-review

Abstract

A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.

Original language	English
Article number	1604447
Pages (from-to)	1604447
Number of pages	8
Journal	Advanced Materials
Volume	29
Issue number	10
DOIs	https://doi.org/10.1002/adma.201604447
Publication status	Published - Mar 2017

Fields of science

103 Physics, Astronomy

JKU Focus areas

Digital Transformation

Access to Document

10.1002/adma.201604447

Cite this

Xu, P., Han, W., Rice, P. M., Jeong, J., Samant, M. G., Mohseni, K., Meyerheim, H. L., Ostanin, S., Maznichenko, I. V., Mertig, I., Gross, E. K. U., Ernst, A., & Parkin, S. S. P. (2017). Reversible Formation of 2D Electron Gas at the LaFeO3/SrTiO3 Interface via Control of Oxygen Vacancies. Advanced Materials, 29(10), 1604447. Article 1604447. https://doi.org/10.1002/adma.201604447

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abstract = "A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.",

author = "Pengfa Xu and Wei Han and Rice, {Philip M.} and Jaewoo Jeong and Samant, {Mahesh G.} and K. Mohseni and Meyerheim, {H. L.} and S. Ostanin and I.V. Maznichenko and I. Mertig and Gross, {Eberhard K.U.} and Arthur Ernst and Parkin, {S. S. P.}",

year = "2017",

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doi = "10.1002/adma.201604447",

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AU - Xu, Pengfa

AU - Han, Wei

AU - Rice, Philip M.

AU - Jeong, Jaewoo

AU - Samant, Mahesh G.

AU - Mohseni, K.

AU - Meyerheim, H. L.

AU - Ostanin, S.

AU - Maznichenko, I.V.

AU - Mertig, I.

AU - Gross, Eberhard K.U.

AU - Ernst, Arthur

AU - Parkin, S. S. P.

PY - 2017/3

Y1 - 2017/3

N2 - A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.

AB - A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.

U2 - 10.1002/adma.201604447

DO - 10.1002/adma.201604447

M3 - Article

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VL - 29

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JO - Advanced Materials

JF - Advanced Materials

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