Results on a HEIFET Including the Gunn Effect

Erich Kolmhofer, Kurt Lübke, Hartwig Thim

Research output: Working paper and reports › Research report

Abstract

The purpose of the work reported is to present the recent modifications which we applied to our Hot Electron Injection Field Effect Transistor (HEIFET). In our modified structure the ohmic source and drain contacts of a MESFET are both replaced by a combination of an ohmic contact and a Schottky contact. In addition we tried to enhance the function of our device by utilization of the Gunn effect.
Original languageEnglish
Number of pages4
Publication statusPublished - 2002

Fields of science

  • 202 Electrical Engineering, Electronics, Information Engineering
  • 202019 High frequency engineering
  • 202021 Industrial electronics
  • 202027 Mechatronics
  • 202028 Microelectronics
  • 202036 Sensor systems
  • 202037 Signal processing
  • 203017 Micromechanics
  • 502058 Digital transformation

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