Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Sabine Alamé; Andrea Navarro Quezada; Daria Skuridina; Christoph Reich; Dimitri Henning; Martin Frentrup; Tim Wernicke; Ingrid Koslow; Michael Kneissl; Norbert Esser; Patrick Vogt

doi:10.1016/j.mssp.2016.02.013

Preparation and structure of ultra-thin GaN (0001) layers on In_0.11Ga_0.89N-single quantum wells

Sabine Alamé^*
, Andrea Navarro Quezada
, Daria Skuridina
, Christoph Reich
, Dimitri Henning
, Martin Frentrup
, Tim Wernicke
, Ingrid Koslow
, Michael Kneissl
, Norbert Esser
, Patrick Vogt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	7-11
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	55
DOIs	https://doi.org/10.1016/j.mssp.2016.02.013
Publication status	Published - 15 Nov 2016
Externally published	Yes

Fields of science

103020 Surface physics

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10.1016/j.mssp.2016.02.013

Cite this

@article{64098ec965db4836baff5cec0ee90b05,

title = "Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells",

keywords = "GaN (0001), GaN thin films, InGaN quantum well, Photoelectron spectroscopy, Photoluminescence, Surface reconstruction",

author = "Sabine Alam{\'e} and Quezada, \{Andrea Navarro\} and Daria Skuridina and Christoph Reich and Dimitri Henning and Martin Frentrup and Tim Wernicke and Ingrid Koslow and Michael Kneissl and Norbert Esser and Patrick Vogt",

note = "Publisher Copyright: {\textcopyright} 2016 The Authors",

year = "2016",

month = nov,

day = "15",

doi = "10.1016/j.mssp.2016.02.013",

language = "English",

volume = "55",

pages = "7--11",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

AU - Alamé, Sabine

AU - Quezada, Andrea Navarro

AU - Skuridina, Daria

AU - Reich, Christoph

AU - Henning, Dimitri

AU - Frentrup, Martin

AU - Wernicke, Tim

AU - Koslow, Ingrid

AU - Kneissl, Michael

AU - Esser, Norbert

AU - Vogt, Patrick

PY - 2016/11/15

Y1 - 2016/11/15

KW - GaN (0001)

KW - GaN thin films

KW - InGaN quantum well

KW - Photoelectron spectroscopy

KW - Photoluminescence

KW - Surface reconstruction

UR - https://www.scopus.com/pages/publications/84959480628

U2 - 10.1016/j.mssp.2016.02.013

DO - 10.1016/j.mssp.2016.02.013

M3 - Article

AN - SCOPUS:84959480628

SN - 1369-8001

VL - 55

SP - 7

EP - 11

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Fields of science

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Preparation and structure of ultra-thin GaN (0001) layers on In_0.11Ga_0.89N-single quantum wells