Photon entanglement generation and teleportation using semiconductor quantum dots

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Abstract

Among different solid-state emitters of quantum light, epitaxial GaAs quantum dots (QDs) have recently emerged as nearly-ideal sources of triggered polarization entangled photon pairs [1]. This property, combined with the strongly suppressed probability of multiphoton emission under resonant excitation [2] has allowed the implementation of quantum teleportation using photons subsequently emitted by a single QD [3]. In this talk I will discuss the peculiar properties of GaAs QDs [4,5], their performance as emitters of both single and entangled photons, as well as possible methods to engineer their light emission characteristics [1,4] to meet the demanding requirements imposed by photonic quantum technologies. [1] D. Huber et al. Phys. Rev. Lett. 121, 033902 (2018). [2] L. Schweickert et al. Appl. Phys. Lett. 112, 093106 (2018). [3] M. Reindl et al. Science Adv. (2018). [4] X. Yuan et al. Nat. Comm. 9, 3058 (2018). [5] M. Reindl et al. https://arxiv.org/abs/1901.11251.
Original languageEnglish
Title of host publicationQuantum Nanophotonic Materials, Devices, and Systems 2019
Pages1109117
Number of pages1
Volume11091
DOIs
Publication statusPublished - 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering

Fields of science

  • 103 Physics, Astronomy

JKU Focus areas

  • Digital Transformation

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