Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon

R. Job, W. R. Fahrner, A. Ulyashin, Yu. A. Bumay, A. I. Ivanovo, Leopold Palmetshofer

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Solid State Phenomena
Volume	57-58
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.57-58.91
Publication status	Published - 1997

Fields of science

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon",

author = "R. Job and Fahrner, \{W. R.\} and A. Ulyashin and Bumay, \{Yu. A.\} and Ivanovo, \{A. I.\} and Leopold Palmetshofer",

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AU - Job, R.

AU - Fahrner, W. R.

AU - Ulyashin, A.

AU - Bumay, Yu. A.

AU - Ivanovo, A. I.

AU - Palmetshofer, Leopold

PY - 1997

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VL - 57-58

SP - 91

EP - 96

JO - Solid State Phenomena

JF - Solid State Phenomena

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