Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon

A. Ulyashin; Yu. A. Bumay; W. R. Fahrner; A. I. Ivanovo; R. Job; Leopold Palmetshofer

doi:10.1557/PROC-469-95

Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon

A. Ulyashin, Yu. A. Bumay, W. R. Fahrner, A. I. Ivanovo, R. Job, Leopold Palmetshofer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

Original language	English
Title of host publication	Symposium E – Defects and Diffusion in Silicon Processing
Editors	T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk
Pages	95-100
Number of pages	6
Volume	469
DOIs	https://doi.org/10.1557/PROC-469-95
Publication status	Published - 1997

Publication series

Name	Materials Research Society Symposium - Proceedings
ISSN (Print)	0272-9172

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1557/PROC-469-95

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Ulyashin, A., Bumay, Y. A., Fahrner, W. R., Ivanovo, A. I., Job, R., & Palmetshofer, L. (1997). Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon. In T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk (Ed.), Symposium E – Defects and Diffusion in Silicon Processing (Vol. 469, pp. 95-100). (Materials Research Society Symposium - Proceedings). https://doi.org/10.1557/PROC-469-95

Ulyashin, A. ; Bumay, Yu. A. ; Fahrner, W. R. et al. / Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon. Symposium E – Defects and Diffusion in Silicon Processing. editor / T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk. Vol. 469 1997. pp. 95-100 (Materials Research Society Symposium - Proceedings).

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title = "Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon",

author = "A. Ulyashin and Bumay, \{Yu. A.\} and Fahrner, \{W. R.\} and Ivanovo, \{A. I.\} and R. Job and Leopold Palmetshofer",

year = "1997",

doi = "10.1557/PROC-469-95",

language = "English",

volume = "469",

series = "Materials Research Society Symposium - Proceedings",

pages = "95--100",

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booktitle = "Symposium E – Defects and Diffusion in Silicon Processing",

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Ulyashin, A, Bumay, YA, Fahrner, WR, Ivanovo, AI, Job, R & Palmetshofer, L 1997, Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon. in T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk (ed.), Symposium E – Defects and Diffusion in Silicon Processing. vol. 469, Materials Research Society Symposium - Proceedings, pp. 95-100. https://doi.org/10.1557/PROC-469-95

Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon. / Ulyashin, A.; Bumay, Yu. A.; Fahrner, W. R. et al.
Symposium E – Defects and Diffusion in Silicon Processing. ed. / T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk. Vol. 469 1997. p. 95-100 (Materials Research Society Symposium - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

TY - GEN

T1 - Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon

AU - Ulyashin, A.

AU - Bumay, Yu. A.

AU - Fahrner, W. R.

AU - Ivanovo, A. I.

AU - Job, R.

AU - Palmetshofer, Leopold

PY - 1997

Y1 - 1997

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DO - 10.1557/PROC-469-95

M3 - Conference proceedings

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T3 - Materials Research Society Symposium - Proceedings

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BT - Symposium E – Defects and Diffusion in Silicon Processing

A2 - T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk, null

ER -

Ulyashin A, Bumay YA, Fahrner WR, Ivanovo AI, Job R, Palmetshofer L. Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon. In T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk, editor, Symposium E – Defects and Diffusion in Silicon Processing. Vol. 469. 1997. p. 95-100. (Materials Research Society Symposium - Proceedings). doi: 10.1557/PROC-469-95

Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon

Publication series

Fields of science

UN SDGs

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