Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeyN Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of GaδFeN layers with FeyN embedded nanocrystals (NCs) via AlxGa1−xN buffers with different Al concentration 0<xAl<41% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped ε-Fe3N NCs takes place. Already at an Al concentration xAl≈ 5% the structural properties—phase, shape, orientation—as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic γ’-GayFe4−yN nanocrystals in the layer on the xAl=0% buffer lies in-plane, the easy axis of the ε-Fe3N NCs in all samples with AlxGa1−xN buffers coincides with the [0001] growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.