Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms

Gang Chen; Herbert Lichtenberger; Friedrich Schäffler; Wolfgang Jantsch; Günther Bauer

doi:10.1063/1.2729759

Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms

Gang Chen, Herbert Lichtenberger, Friedrich Schäffler, Wolfgang Jantsch, Günther Bauer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006
Editors	W. Jantsch, F. Schäffler
Place of Publication	Melville, NY
Pages	39-40
Number of pages	2
Volume	893
DOIs	https://doi.org/10.1063/1.2729759
Publication status	Published - 2007

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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10.1063/1.2729759

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Chen, G., Lichtenberger, H., Schäffler, F., Jantsch, W., & Bauer, G. (2007). Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms. In W. Jantsch, F. Schäffler (Ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006 (Vol. 893, pp. 39-40). (AIP Conference Proceedings; Vol. 893).. https://doi.org/10.1063/1.2729759

Chen, Gang ; Lichtenberger, Herbert ; Schäffler, Friedrich et al. / Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms. Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. editor / W. Jantsch, F. Schäffler. Vol. 893 Melville, NY, 2007. pp. 39-40 (AIP Conference Proceedings).

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title = "Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms",

author = "Gang Chen and Herbert Lichtenberger and Friedrich Sch{\"a}ffler and Wolfgang Jantsch and G{\"u}nther Bauer",

year = "2007",

doi = "10.1063/1.2729759",

language = "English",

isbn = "9780735403970",

volume = "893",

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Chen, G, Lichtenberger, H, Schäffler, F , Jantsch, W & Bauer, G 2007, Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms. in W. Jantsch, F. Schäffler (ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. vol. 893, AIP Conference Proceedings, vol. 893, Melville, NY, pp. 39-40. https://doi.org/10.1063/1.2729759

Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms. / Chen, Gang; Lichtenberger, Herbert; Schäffler, Friedrich et al.
Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. ed. / W. Jantsch, F. Schäffler. Vol. 893 Melville, NY, 2007. p. 39-40 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

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T1 - Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms

AU - Chen, Gang

AU - Lichtenberger, Herbert

AU - Schäffler, Friedrich

AU - Jantsch, Wolfgang

AU - Bauer, Günther

PY - 2007

Y1 - 2007

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DO - 10.1063/1.2729759

M3 - Conference proceedings

SN - 9780735403970

VL - 893

T3 - AIP Conference Proceedings

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BT - Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006

A2 - W. Jantsch, F. Schäffler, null

CY - Melville, NY

ER -

Chen G, Lichtenberger H, Schäffler F , Jantsch W , Bauer G. Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms. In W. Jantsch, F. Schäffler, editor, Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. Vol. 893. Melville, NY. 2007. p. 39-40. (AIP Conference Proceedings). doi: 10.1063/1.2729759

Ordering of strained Ge islands on prepatterned Si(001) substrates: Morphological evolution and nucleation mechanisms

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