Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

Andrei Yu Andreev; B.A. Andreev; M.N. Drozdov; Z. F. Krasilnik; Margarita V. Stepikhova; V.B. Shmagin; V.P. Kuznetsov; R.A. Rubtsova; E.A. Uskova; Yu.A. Karpov; Heinz Ellmer; Leopold Palmetshofer; Kurt Piplits; H. Hutter

doi:10.1134/1.1187658

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

Andrei Yu Andreev, B.A. Andreev, M.N. Drozdov, Z. F. Krasilnik, Margarita V. Stepikhova, V.B. Shmagin, V.P. Kuznetsov, R.A. Rubtsova, E.A. Uskova, Yu.A. Karpov, Heinz Ellmer, Leopold Palmetshofer, Kurt Piplits, H. Hutter

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	131–134
Number of pages	4
Journal	Semiconductors
Volume	33
Issue number	2
DOIs	https://doi.org/10.1134/1.1187658
Publication status	Published - Feb 1999

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

Access to Document

10.1134/1.1187658

Cite this

Andreev, A. Y., Andreev, B. A., Drozdov, M. N., Krasilnik, Z. F., Stepikhova, M. V., Shmagin, V. B., Kuznetsov, V. P., Rubtsova, R. A., Uskova, E. A., Karpov, Y. A., Ellmer, H., Palmetshofer, L., Piplits, K., & Hutter, H. (1999). Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy. Semiconductors, 33(2), 131–134. https://doi.org/10.1134/1.1187658

@article{4c790da1d3354230a7eb05c5083abfda,

title = "Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy",

author = "Andreev, \{Andrei Yu\} and B.A. Andreev and M.N. Drozdov and Krasilnik, \{Z. F.\} and Stepikhova, \{Margarita V.\} and V.B. Shmagin and V.P. Kuznetsov and R.A. Rubtsova and E.A. Uskova and Yu.A. Karpov and Heinz Ellmer and Leopold Palmetshofer and Kurt Piplits and H. Hutter",

year = "1999",

month = feb,

doi = "10.1134/1.1187658",

language = "English",

volume = "33",

pages = "131–134",

journal = "Semiconductors",

number = "2",

}

Andreev, AY, Andreev, BA, Drozdov, MN, Krasilnik, ZF, Stepikhova, MV, Shmagin, VB, Kuznetsov, VP, Rubtsova, RA, Uskova, EA, Karpov, YA, Ellmer, H, Palmetshofer, L, Piplits, K & Hutter, H 1999, 'Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy', Semiconductors, vol. 33, no. 2, pp. 131–134. https://doi.org/10.1134/1.1187658

TY - JOUR

T1 - Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

AU - Andreev, Andrei Yu

AU - Andreev, B.A.

AU - Drozdov, M.N.

AU - Krasilnik, Z. F.

AU - Stepikhova, Margarita V.

AU - Shmagin, V.B.

AU - Kuznetsov, V.P.

AU - Rubtsova, R.A.

AU - Uskova, E.A.

AU - Karpov, Yu.A.

AU - Ellmer, Heinz

AU - Palmetshofer, Leopold

AU - Piplits, Kurt

AU - Hutter, H.

PY - 1999/2

Y1 - 1999/2

UR - https://www.scopus.com/pages/publications/0033077058

U2 - 10.1134/1.1187658

DO - 10.1134/1.1187658

M3 - Article

VL - 33

SP - 131

EP - 134

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

Fields of science

Access to Document

Other files and links

Cite this