Optical properties of individual site-controlled Ge quantum dots

Martyna Justyna Grydlik; Moritz Brehm; Tageshi Tayagaki; Gregor Langer; Oliver G. Schmidt; Friedrich Schäffler

doi:10.1063/1.4923188

Optical properties of individual site-controlled Ge quantum dots

Martyna Justyna Grydlik
, Moritz Brehm
, Tageshi Tayagaki
, Gregor Langer
, Oliver G. Schmidt
, Friedrich Schäffler

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

Original language	English
Article number	251904
Pages (from-to)	251904
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	25
DOIs	https://doi.org/10.1063/1.4923188
Publication status	Published - 22 Jun 2015

Fields of science

103 Physics, Astronomy

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4923188

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title = "Optical properties of individual site-controlled Ge quantum dots",

abstract = "We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.",

author = "Grydlik, \{Martyna Justyna\} and Moritz Brehm and Tageshi Tayagaki and Gregor Langer and Schmidt, \{Oliver G.\} and Friedrich Sch{\"a}ffler",

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journal = "Applied Physics Letters",

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T1 - Optical properties of individual site-controlled Ge quantum dots

AU - Grydlik, Martyna Justyna

AU - Brehm, Moritz

AU - Tayagaki, Tageshi

AU - Langer, Gregor

AU - Schmidt, Oliver G.

AU - Schäffler, Friedrich

PY - 2015/6/22

Y1 - 2015/6/22

N2 - We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

AB - We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

UR - https://www.scopus.com/pages/publications/84933516354

U2 - 10.1063/1.4923188

DO - 10.1063/1.4923188

M3 - Article

SN - 0003-6951

VL - 106

SP - 251904

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251904

ER -

Optical properties of individual site-controlled Ge quantum dots

Abstract

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