One-dimensional to three-dimensional ripple-to-dome transition for Si Ge on vicinal Si (1 1 10)

Bolormaa Sanduijav, D. Scopece, Dan G. Matei, Gang Chen, Friedrich Schäffler, Leo Miglio, Gunther Springholz

Research output: Contribution to journal › Article › peer-review

Fields of science

@article{3acf78895a8e4f20b80fc97a6d0736b6,

title = "One-dimensional to three-dimensional ripple-to-dome transition for Si Ge on vicinal Si (1 1 10)",

author = "Bolormaa Sanduijav and D. Scopece and Matei, \{Dan G.\} and Gang Chen and Friedrich Sch{\"a}ffler and Leo Miglio and Gunther Springholz",

year = "2012",

doi = "10.1103/PhysRevLett.109.025505",

language = "English",

volume = "109",

pages = "025505",

journal = "Physical Review Letters",

issn = "1079-7114",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - One-dimensional to three-dimensional ripple-to-dome transition for Si Ge on vicinal Si (1 1 10)

AU - Sanduijav, Bolormaa

AU - Scopece, D.

AU - Matei, Dan G.

AU - Chen, Gang

AU - Schäffler, Friedrich

AU - Miglio, Leo

AU - Springholz, Gunther

PY - 2012

Y1 - 2012

U2 - 10.1103/PhysRevLett.109.025505

DO - 10.1103/PhysRevLett.109.025505

M3 - Article

SN - 1079-7114

VL - 109

SP - 025505

JO - Physical Review Letters

JF - Physical Review Letters

IS - 2

M1 - 025505

ER -